sot-23-6l plastic-encapsulate transistors CJ10P20DE6 transistor (pnp) features z suitable for reducing set?s size as a result from enabling high-density mounting due to one pin small packages z low series resistance z low capacitance marking: maximum ratings (t a =25 unless otherwise noted) symbol para meter value units v cbo collector-base voltage -20 v v ceo collector-emitter voltage -20 v v ebo emitter-base voltage -5 v i c collector current -continuous -2.5 a p c collector dissipation 0.35 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (ta=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100 a, i e =0 -20 v collector-emitter breakdown voltage v (br)ceo * i c = -10ma, i b =0 -20 v emitter-base breakdown voltage v (br)ebo i e = -100 a, i c =0 -5 v collector cut-off current i cbo v cb = -15v, i e =0 -0.1 a collector emitter cut-off current i ces v ces =-15v -0.1 a emitter cut-off current i ebo v eb = -4v, i c =0 -0.1 a h fe1 * v ce =-2v, i c = -10ma 250 h fe2 * v ce = -2v, i c =-0.1a 300 h fe3 * v ce =-2v, i c = -2a 150 dc current gain h fe4 * v ce = -2v, i c =-6a 15 v ce(sat)1 * i c =-0.1a, i b =-0.01a -0.03 v v ce(sat)2 * i c =-1a, i b = -0.02a -0.22 v v ce(sat)3 * i c =-1.5a, i b = -0.05a -0.25 v collector-emitter saturation voltage v ce(sat)4 * i c =-2.5a, i b = -0.15a -0.35 v base-emitter saturation voltage v be(sat) * i c =-2.5a, i b = -0.15a -1.05 v base-emitter turn-on voltage v be(on) * v ce =-2v,i c =-2.5a -0.85 -0.95 v transition frequency f t v ce =-10v,i c = -50ma,f=100mhz 150 mhz output capacitance c obo v cb =-10v, i e =0, f=1mhz 30 pf turn-on time t on v cc =-10v,i c =-1a,i b1 =i b2 =-0.02a 75 n s turn-off time t off v cc =-10v, i c =-1a,i b1 =i b2 =-0.02a 670 n s * pulsed test: pulse width=300 s , duty cycle 2%. sot-23-6l 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,feb,2012
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1 -10 -100 -1000 -0.1 -1 -10 10 100 -1 -10 -100 -1000 10 100 1000 -0 -1 -2 -3 -4 -0.00 -0.05 -0.10 -0.15 -0.20 -1 -10 -100 -1000 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 0 25 50 75 100 125 150 0 70 140 210 280 350 420 -100 0 50 100 150 200 250 300 -1 -10 -100 -1000 -1 -10 -100 CJ10P20DE6 t a =100 t a =25 common emitter v ce =-2v collector current i c (ma) base-emitter voltage v be (v) -30 -10 -6000 300 30 c ob c ib -0.3 -20 -3 f=1mhz i e =0/i c =0 t a =25 c ob /c ib ?? v cb /v eb capacitance c (pf) reverse bias voltage v (v) -6000 t a =100 t a =25 common emitter v ce =-2v h fe ?? i c 300 30 dc current gain h fe collector current i c (ma) i c ?? v be -500ua common emitter t a =25 static characteristic -350ua -450ua -300ua -250ua -400ua -200ua -150ua -100ua i b =-50ua collector current i c (a) collector-emitter voltage v ce (v) =50 t a =100 t a =25 =50 -6000 v besat ?? i c base-emmitter saturation voltage v besat (v) collector current i c (ma) p c ?? t a collector power dissipation p c (mw) ambient temperature t a ( ) i c f t ?? transition frequency f t (mhz) collector current i c (ma) v ce =-10v t a =25 =100 =10 t a =100 -500 -6000 v cesat ?? i c t a =25 collector-emmitter saturation voltage v cesat (mv) collector current i c (ma) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,feb,2012
|
